ResearchSEA
Aug 18, 2011
Preventing the recombination of free charges produced when light strikes  a solar cell is one of the main goal of engineers attempting to extract  the maximum energy conversion efficiency from their devices. One way to  achieve this is by building into the cell a ‘heterojunction’ between  positive (p) and negative (n) type semiconductors, which allows the  light-induced positive and negative charge to escape the cell by moving  in opposite directions at the heterojunction interface. Mingyong Han at  the A*STAR Institute of Materials Research and Engineering and  co-workers1 have now discovered a way to produce high-quality nanoscale  heterojunctions, setting the stage for cheaper and more efficient  photovoltaic devices.
Nanoscale semiconductor crystals provide enhanced surface area for light  absorption and are also cheaper to produce than conventional  lithography-patterned cell structures. However, it has been extremely  difficult to form high-quality heterojunctions between n- and p-type  semiconductors in a way that achieves the intimate inter-crystal contact  needed to enhance device performance.
Resolving this problem requires a technique that can bind the two  semiconductors together chemically. Previous studies have produced  binary nanocrystals with a spherical ‘core–shell’ structure.  Unfortunately, heterojunction based on these nanocrystals have low  energy conversion efficiency because light has difficulty reaching the  inner core. Han and his co-workers overcame this problem by adopting a  different route for synthesis.
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