Jan 25, 2011
The tolerances on feature size, shape, and placement for next generation computer chips fabricated with extreme ultra-violet (EUV) lithography will range from a maximum of a few nanometers down to less than 1 nm.
To achieve these tolerances, the sidewall roughness of the features, traditionally called line edge roughness (LER), is required to be less than 2 nm. Mask LER is about 10 nm, which reduces to 2 nm on the wafer using a 5X EUV imaging system.
To achieve these tolerances, the sidewall roughness of the features, traditionally called line edge roughness (LER), is required to be less than 2 nm. Mask LER is about 10 nm, which reduces to 2 nm on the wafer using a 5X EUV imaging system.
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